SRAM cells are designed to ensure that the contents of the cell are not altered during read access and the cell can quickly change its state during write operation. These conflicting requirements for ...

The scaling of the 6T SRAM cell is slowing and the surrounding circuitry is getting more complex, so more of the die will be taken up by SRAM at future nodes. The six-transistor static memory cell ...

Zeno’s one-transistor Bi-SRAM uses a single transistor and is ~5× smaller than a conventional SRAM — which uses six-transistor bitcells (6T-SRAM) — at the same technology node One way to look at a ...

A process flow for six-transistor (6T) SRAM suitable for 5nm chips has been created by Belgian research lab Imec working with Unisantis Electronics Singapore. It uses surrounding gate transistors ...

Chipmakers face a multitude of challenges at the 20nm logic node and beyond, including the task of cramming more functions on the same chip without compromising on power and performance. There is one ...

Leti has combined FD-SOI technology with its 3D CoolCube monolithic stacking technology to create 4T SRAM bitcells with the same functionality level of 6T bitcells, reducing die size by 30%. With SRAM ...

At ISSCC this year Samsung published a paper entitled "A 10nm FinFET 128Mb SRAM with Assist Adjustment System for Power, Performance, and Area Optimization. In the paper Samsung disclosed a high ...