Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started providing engineering samples of “ TB9104FTG ,” a ...

Infineon Technologies has launched its first isolated gate driver integrated circuits (ICs) with opto‑emulator inputs, aimed ...

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...

This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential ...

For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...

NUREMBURG, Germany--(BUSINESS WIRE)--PCIM 2023 – Power Integrations (NASDAQ: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced a new, ...

MOSFET switching determined to be the source of the damping resistance, as demonstrated using a forward converter SPICE model. The process of correlating SPICE models to bench data often leads to ...

CHANDLER, Ariz., Feb. 20, 2024 (GLOBE NEWSWIRE) -- The electrification of everything is driving the widespread adoption of Silicon Carbide (SiC) technology in medium-to-high-voltage applications like ...

Infineon has introduced 2.3kV isolated gate drivers for IGBTs and mosfets with on-the-fly switchable dual slew-rates. Branded ‘2L-SRC Compact’ and numbered ‘1ED32xx’, 10 and 18A versions are available ...