SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...

The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...

The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...

Here are two practical, effective means for determining a power MOSFET's suitability for power-switching applications. The Power MOSFET is a very popular switching device used in switching power ...

Alpha and Omega Semiconductor unveiled its MOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the new platform ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPD7107F,” a gate driver switch IPD [1] that controls the conduction and shut-off of current supplied ...

Self protected against excessive temperature, current, and voltage, as well as ESD, the BSP75G 60V, 550-m? n-channel MOSFET will also protect the load via internal current limiting. The device ...

In a critical advance that will help designers meet the stringent power-density and packaging requirements of new sub-brick power architectures, Siliconix Inc. announced the industry's first 200-V ...

The Forward and Flyback converters are two popular topologies widely used in isolated DC-DC power converters. These topologies are favored by designers for their simplicity, ability to handle multiple ...