Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous ...
Abstract: For 3D NAND memory, with continuous word line (WL) pitch scaling, deteriorated WL interference and the impact on triple-level cell (TLC) operation window are anticipated. However, as the WL ...
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