Any semiconductor has limits on how much voltage, how much current, and for how much time combinations of voltage and current can be supported in normal usage. Sometimes that information is provided ...
Abstract: In this paper, a surface-potential-based compact model is proposed for the capacitance of an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, i.e., with ...
Abstract: Effective interface trap characterization approaches are indispensable in the development of gate stack and dielectric surface passivation technologies in III-nitride (III-N) insulated-gate ...
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This is the primary documentation for the MoveIt project. We strongly encourage you to help improve MoveIt's documentation. Please consider helping improve the tutorials, port old ones from ROS 1, and ...
Creative Commons (CC): This is a Creative Commons license. Attribution (BY): Credit must be given to the creator. Article Views are the COUNTER-compliant sum of full text article downloads since ...
In the Big Data era, data is not only becoming bigger and bigger; it is also becoming more and more complex. This translates into a spectacular increase of the dimensionality of the data. For example, ...
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