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Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Get ready for your aha moment: Every weekday, host Meghna Chakrabarti pierces your news bubble to expose the whole story. Getting answers to the questions that need to be asked, examining our history ...
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