Abstract: This study estimates the intrinsic gate oxide lifetime of two generations of commercial planar SiC MOSFETs using pulse-voltage time-dependent dielectric breakdown (PV-TDDB) and ...
Abstract: This study investigated different layer thicknesses of HfO2/ZrO2 superlattice (SL HZO) as gate oxides. Metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) capacitors were ...
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